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| to-220 -3l plastic-encapsulate transistors 2sd2137 transistor (npn) features z high f orward c urrent t ransfer r atio h fe which h as s atisfactory l inearity z low c ollector to e mitter s aturation v oltage v ce(sat) z allowing s upply with the r adial t aping maximum ratings( t a =25 unless otherwise noted) symbol parameter value unit v cbo collector-base voltage 60 v v ceo collector-emitter voltage 60 v v ebo emitter-base voltage 6 v i c collector current -continuous 3 a p c collector power dissipation 2 w t j junction temperature 150 t stg storage temperature -55-150 electrical characteristics (t a =25 unless otherwise specified) parameter symbol test conditions m in t yp max unit collector-base breakdown voltage v (br)cbo i c =0.1ma, i e =0 60 v collector-emitter breakdown voltage v (br)ceo i c =30ma, i b =0 60 v emitter-base breakdown voltage v (br)ebo i e =0.1ma, i c =0 6 v collector cut-off current i cbo v cb =60v, i e =0 100 a emitter cut-off current i ebo v eb =6v, i c =0 100 a h fe(1) v ce =4v, i c =1a 70 320 dc current gain h fe(2) v ce =4v, i c =3a 10 collector-emitter saturation voltage v ce(sat) i c =3a, i b =375ma 1.2 v base-emitter voltage v be v ce =4v, i c =3a 1.8 v transition frequency f t v ce =5v, i c =0.2a, f=10mhz 30 mhz turn-on time t on 0.3 s storage time t stg 2.5 s switch time fall time t f v cc =50v,i c =1a, i b1 =-i b2 =0.1a 0.2 s classification of h fe(1) rank q p o range 70-150 120-250 160-320 to-220 -3l 1. base 2. collector 3. emitter 1 of 1 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
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